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| Preliminary Data SIPMOS(R) Power Transistor Features * N channel * SPD 07N20 VDS RDS(on) ID 200 0.4 7 V A Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current Enhancement mode * Avalanche rated * dv/dt rated Type SPD07N20 SPU07N20 Package P-TO252 P-TO251 Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S Q67040-S4120-A2 Tape and Reel Q67040-S4112-A2 Tube Maximum Ratings, at Tj = 25 C, unless otherwise specified Symbol Parameter Continuous drain current Value 7 4.5 28 120 4 6 Unit A ID TC = 25 C TC = 100 C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 C Avalanche energy, single pulse mJ ID = 7 A, VDD = 50 V, RGS = 25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/s IS = 7 A, V DS = 160 V, di/dt = 200 A/s, Tjmax = 175 C Gate source voltage Power dissipation VGS Ptot Tj , Tstg 20 40 -55... +175 55/150/56 V W C TC = 25 C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet 1 05.99 SPD 07N20 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Symbol min. Values typ. max. 3.1 100 75 50 K/W Unit RthJC RthJA RthJA - Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 3 max. 4 A 0.1 10 1 100 100 nA 0.3 0.4 V Unit V(BR)DSS VGS(th) IDSS 200 2.1 VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS ID = 1 mA Zero gate voltage drain current VDS = 200 V, VGS = 0 V, Tj = 25 C VDS = 200 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 4.5 A 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 05.99 SPD 07N20 Electrical Characteristics, at T j = 25 C, unless otherwise specified Symbol Values Parameter Unit max. 530 130 70 15 ns S pF min. Dynamic Characteristics Transconductance typ. 4.2 400 85 45 10 g fs Ciss Coss Crss td(on) 3 - VDS2*ID*RDS(on)max , ID = 4.5 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 3 A, RG = 50 Rise time tr - 40 60 VDD = 30 V, VGS = 10 V, ID = 3 A, RG = 50 Turn-off delay time td(off) - 55 75 VDD = 30 V, VGS = 10 V, ID = 3 A, RG = 50 Fall time tf - 30 40 VDD = 30 V, VGS = 10 V, ID = 3 A, RG = 50 Data Sheet 3 05.99 SPD 07N20 Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Dynamic Characteristics Gate to source charge Symbol min. Values typ. 5 10 21 7 max. 7.5 22.5 31.5 V nC Unit Qgs Qgd Qg V(plateau) - VDD = 160 V, ID = 7 A Gate to drain charge VDD = 160 V, ID = 7 A Gate charge total VDD = 160 V, ID = 7 A, V GS = 0 to 10 V Gate plateau voltage VDD = 160 V, ID = 7 A Reverse Diode Inverse diode continuous forward current IS I SM VSD t rr Q rr - 1.3 200 0.6 7 28 1.7 300 0.9 A TC = 25 C Inverse diode direct current,pulsed TC = 25 C Inverse diode forward voltage V ns C VGS = 0 V, I F = 14 A Reverse recovery time VR = 100 V, I F=IS , diF/dt = 100 A/s Reverse recovery charge VR = 100 V, I F=lS , di F/dt = 100 A/s Data Sheet 4 05.99 SPD 07N20 Power Dissipation Drain current Ptot = f (TC) SPD07N20 ID = f (TC ) parameter: VGS 10 V SPD07N20 45 W 7.5 A 35 30 6.0 5.5 Ptot 5.0 ID 25 20 15 10 5 0 0 C 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 20 40 60 80 100 120 160 0.0 0 20 40 60 80 100 120 C 160 TC TC Safe operating area Transient thermal impedance I D = f (V DS) parameter : D = 0 , T C = 25 C 10 2 SPD07N20 ZthJC = f (tp ) parameter : D = tp /T 10 1 SPD07N20 K/W A tp = 22.0s /I D V DS 10 0 100 s Z thJC 1 ms ID R DS (o n) 10 1 = 10 -1 D = 0.50 0.20 10 0 10 ms 0.10 10 -2 single pulse 0.05 0.02 0.01 DC 10 -1 0 10 10 1 10 2 V 10 3 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS tp Data Sheet 5 05.99 SPD 07N20 Typ. output characteristics I D = f (VDS) parameter: tp = 80 s SPD07N20 Typ. drain-source-on-resistance RDS(on) = f (ID) parameter: V GS SPD07N20 17 A Ptot = 40W l ijkg h f VGS [V] a b 4.0 4.5 1.3 a b c d e 14 1.1 1.0 RDS(on) 12 c d 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 VGS [V] = a 4.0 b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 j 9.0 k l 10.0 20.0 ID 10 e e f g 8 6 c dh i j k l 4 b l f h kg j i 2 a 0.1 0 0 2 4 6 8 V 11 VDS 0.0 0 2 4 6 8 A 12 ID Typ. transfer characteristics I D= f (VGS) parameter: tp = 80 s Typ. forward transconductance gfs = f(ID ); Tj = 25C parameter: gfs 6 VDS 2 x I D x RDS(on) max 13 A 11 10 9 S 4 ID 8 7 gfs 3 2 1 V 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 10 0 0 2 4 6 8 10 12 14 16 18 A 21 VGS ID Data Sheet 6 05.99 SPD 07N20 Drain-source on-resistance Gate threshold voltage RDS(on) = f (Tj) parameter : ID = 4.5 A, VGS = 10 V SPD07N20 VGS(th) = f (Tj) parameter : VGS = V DS, ID = 1 mA 5.0 V 4.4 4.0 1.8 1.4 VGS(th) RDS(on) 3.6 3.2 2.8 2.4 typ max 1.2 1.0 0.8 2.0 98% 0.6 1.6 min typ 0.4 0.2 0.0 -60 1.2 0.8 0.4 0.0 -60 -20 20 60 100 C 160 -20 20 60 100 140 C 200 Tj Tj Typ. capacitances C = f (VDS) parameter: V GS = 0 V, f = 1 MHz 10 4 Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 s 10 2 SPD07N20 pF A 10 3 C 10 1 C iss 10 2 IF 10 0 Coss Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 1 0 5 10 15 20 25 30 V 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VDS VSD Data Sheet 7 05.99 SPD 07N20 Avalanche Energy EAS = f (Tj) parameter: ID = 7 A, VDD = 50 V Typ. gate charge VGS = f (QGate ) parameter: ID puls = 7 A SPD07N20 RGS = 25 130 mJ 16 V 110 100 90 12 VGS EAS 80 70 10 0,2 VDS max 0,8 VDS max 8 60 50 40 30 20 10 0 20 40 60 80 100 120 C 6 4 2 160 0 0 4 8 12 16 20 24 28 Tj nC 34 Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPD07N20 245 V 235 V(BR)DSS 230 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 C 180 Tj Data Sheet 8 05.99 |
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